5th European FIB Users Group Meeting (EFUG2001)
Programme, abstracts and presentations
Arcachon (F), 1 October 2001 - 9.30-18.00h
* Review lecture
- FIB for Microsurgery and More, Overview and Challenges
Phillippe Perdu, CNES-Thales laboratory, France
* Oral presentations
- Probe Micromachining by a Focused Ion Beam for Near Field applications
M. Spajer, L. Thiery, Institut des Microtechniques de Franche-Comté, France
- Fabrication of HTS Josephson Junction by FIB and ion implantation
Dae-Joon Kang, N. H. Peng, R. Webb, C. Jeynes, M. G. Blamire, Department of Materials Science, University of Cambridge, UK
- Effect of Ga implantation on the magnetic properties of Permalloy thin films
R. M. Langford, D. Ozkaya, W. L. Chan and A. K. Petford Long, Department of Materials, University of Oxford, UK
- FIB on MEMS and Optical Filter: 2 Case Studies
V. Chazal, Thales, CNES-Thales laboratory, France
- Chemical analysis on Focused Ion Beam cross-sections by scanning Auger microscopy
Download presentation (1458 kB, pdf-format).
H. Bender, IMEC, Leuven, Belgium
- Reliability of Bipolar and MOS circuits after FIB modifications
R. Desplats, CNES-Thales laboratory, France
- FIB Sample Thinning for TEM Holography
G. Auvert, CEA-STMicroelectronics, Grenoble, France
- Lift-out Technique for TEM Sample Preparation in the Semiconductor Industry
F. André, N. Bicais, E. Sřndergĺrd and L.F.Tz. Kwakman, STMicroelectronics, Crolles, France
- FIB-TEM Sample Preparation by In-Situ Lift Out Technique
Download presentation (1438 kB, pdf-format).
H. Roberts and B. Otterloo, Philips Semiconductors, Nijmegen, The Netherlands
- Novel and Practical Backside FIB Device Editing Tool Utilizing a Coaxial, Dual-Beam Photon-Ion Column
T. Lundquist, B. Thompson, S. Boyd, and M. Thompson, Schlumberger Probe Systems
- Preparation of Non Conducting Samples using Focused Ion Beam Techniques
F. Morrissey, FEI, Eindhoven, The Netherlands
* Mini-posters and informal discussions
- Lift-out Procedure for Offline Analysis of Inline Wafers
B. Ebersberger, Infineon, Munchen, Germany
- IC Passive Component Modification Using FIB
B. Domenges, B. Feron, J.-P. Gaslonde, H. Murray, Philips Semiconductors, Caen, France
Download poster (604 kB, pdf-format).
- Micro et Nano-Fabrication par Gravure Ionique Focalisée (FIB)
M. Spajer, IMFC, Besancon, France
- FIB in Nanotechnology
J. Brugger, A.M. Otter, MESA, The Netherlands
- A Tool for General Use in Nanotechnology
A.M. Otter, J. Brugger, G.N. Philips, J.C. Lodder, E. Fluck, L. Vogelaar, F. Segerink, L. Kuipers, N. van Hulst, MESA, The Netherlands
- Performing E-Beam Induced Gas Assisted Etching with a Dual-Beam FIB
J. Gstöttner, Ch. Stepper, D. Schmitt-Landsiedel, TU München, Germany
Download poster (75 kB, pdf-format).
Abstracts and presentations Probe micromachining by a Focused Ion Beam for Near Field applications.
Michel Spajer, Laurent Thiery, Institut des Microtechniques de Franche-Comté 32 av. de l'Observatoire - 25044 Besançon cedex, France
FIB machining has become a powerful tool for the local probe microscopies. In the case of optical probes (fiber or micro-pyramid), it can be combined to the usual pulling or chemical etching process and metallization to produce well characterized nano-apertures at the extremity of the probe. Morover, it can afford the shaping of the probe according to theoretical predictions to optimize their optical efficiency. A trihedral tip has been fabricated to study the influence of the facet angle. Other attempts using a circular milling are done on different materials (Si, SiO2, AsGa). A second application is the manufacturing of thermal probes : two metallic layers are deposited on the fiber tip, separated by an isolating layer. A sub-micron hole is made by FIB milling to ensure the electric contact between the metallic layers. Some problems encountered in the milling strategy and the redeposition will be presented.
Fabrication of HTS Josephson junction by FIB and ion implantation
Dae-Joon Kang1, N. H. Peng2, R. Webb2, C. Jeynes2, Mark G. Blamire1 1Department of Materials Science, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom 2Surrey Centre for Research into Ion Beam Applications, School of Electronics, Computing and Mathematics, University of Surrey, Guilford, GU2 7XH, United Kingdom
We have developed a simple process to fabricate HTS Josephson junctions by a combination of FIB direct milling and ion implantation. The device showed clear dc and ac Josephson effects. This technique is very promising in terms of simplicity and flexibility of fabrication and has potential for high density integration. We will address its methodology and unresolved problems encountered during the development of the process.
Chemical analysis on Focused Ion Beam cross-sections by scanning Auger microscopy
H. Bender, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Chemical analysis on focused ion beam cross-sections can yield further information to interpret the secondary electron images. This is particularly important for failure analysis investigations. Auger electron spectroscopy/microscopy has a high spatial resolution and is a very surface sensitive technique. The geometry of a standard FIB milled crater is however generally not ideal for Auger analysis. The resulting limitations and solutions to optimize the measurements will be discussed. The sensitivity and lateral resolution will be illustrated by some case studies.
Download presentation (1458 kB, pdf-format).
Novel and Practical Backside FIB Device Editing Tool Utilizing a Coaxial, Dual-Beam Photon-Ion Column
Ted Lundquist, Bill Thompson, Sarah Boyd, and Mark Thompson, Schlumberger Probe Systems
Benefits in utilizing a coaxial photon-ion column for FIB edits on flip-chips and even front side devices are increased success rates and process time efficiency. Coaxial IR imaging through the silicon allows the user to locate an edit precisely without losing time in shuttling the DUT between an IR microscope and the FIB column. The removal of this repetitive step significantly reduces edit time and inaccuracies due to variable device dimensions. Through cross-correlating the IR image to the IC design CAD and without opening pilot holes to fiducials, the edit area can be placed with 100nm precision. Light optical navigation on flip chips and CMP processed front side devices greatly reduces Ga exposure of the DUT surface. Accurate endpoint detection from high aspect ratio holes (>20:1) is accomplished with currents as low as 2 pA. Further, all "standard" FIB requirements are addressed by this tool, including FIB resolution of better than 10nm at 1pA, 30keV. Details of the tool's performance doing actual repairs are presented.
Contact : European FIB Users Group